CN102564584A - Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector - Google Patents

Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector Download PDF

Info

Publication number
CN102564584A
CN102564584A CN2011103797017A CN201110379701A CN102564584A CN 102564584 A CN102564584 A CN 102564584A CN 2011103797017 A CN2011103797017 A CN 2011103797017A CN 201110379701 A CN201110379701 A CN 201110379701A CN 102564584 A CN102564584 A CN 102564584A
Authority
CN
China
Prior art keywords
equivalent
photodetector
circuit
veriloga
model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011103797017A
Other languages
Chinese (zh)
Other versions
CN102564584B (en
Inventor
郭方敏
王明甲
宋东东
朱自强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
East China Normal University
Original Assignee
East China Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by East China Normal University filed Critical East China Normal University
Priority to CN 201110379701 priority Critical patent/CN102564584B/en
Publication of CN102564584A publication Critical patent/CN102564584A/en
Application granted granted Critical
Publication of CN102564584B publication Critical patent/CN102564584B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention discloses a modeling method for an equivalent circuit of a high-sensitivity quantum effect photodetector. The modeling method is characterized in that a quantum dot-quantum well photodetector is subjected to electrical characteristic tests under the conditions of different radiation powers and device biases, and an equivalent circuit model is established by using a 'VerilogA' language, and is verified by circuit simulation software, so that a photodetector model capable of accurately reflecting the characteristics of devices with different structures is provided for the design of a readout circuit. Compared with the prior art, the modeling method disclosed by the invention has the advantages that: the modeling method is simple in modeling procedure, flexible in modification and high in efficiency; settings of different corresponding optical power and device bias parameters can be conveniently modified; and the different optical powers and the different device biases can be realized by directly inputting specific data in corresponding preset optical power and device bias parameters in the attributes of the equivalent circuit model.

Description

The modeling method of high sensitivity quantum effect photodetector equivalent electrical circuit
Technical field
The present invention relates to electronics, circuit design technique field, especially a kind of modeling method of high sensitivity quantum effect photodetector equivalent electrical circuit.
Background technology
Photodetector is being taken on the role who the light signal that receives is converted into electric signal.Along with the progress of quantum well, quantum dot physics and material technology, the quantum effect photodetector also arises at the historic moment in recent years.The quantum effect photodetector has that dark current is little, sensitivity is big, dynamic range is big, the photoelectric transformation efficiency advantages of higher under low-light irradiation, it is widely used in fields such as medical treatment, biomolecule science, environmental monitoring.The major function of sensing circuit in Photodetection system is that the detector feeble signal is carried out pre-service; And an interface is provided at the signal Processing inter-stage, in to the design of sensing circuit, need the equivalent electrical circuit that can accurately reflect quantum effect photodetector characteristic.
At present, some typical photoelectric detectors have been set up some equivalent-circuit models, these models mostly are based on and obtain on the photodetector internal physical equations based.Since the physical characteristics parameter of photodetector device inside too much and the approximate expression that when finding the solution a large amount of physical characteristics equations, obtains based on multiple hypothesis all can influence the precision of equivalent-circuit model to a great extent, thereby bring difficulty for the design of its sensing circuit.And in the solution procedure, because the labyrinth of photodetector and the various material parameters of use thereof can make that also the program composition in the modeling process is complicated.
In the patent No.: proposed more simple and practical equivalent electrical circuit modeling method in ZL 200910047116.X " a kind of method for designing of photo-detector sensing circuit "; This method is to draw according to direct matches of electrical characteristics such as the I-V of device and C-V; The limitation of this modeling method is: the I-V and the C-V characteristic that can not reflect photodetector under the different exposure light power; And photodetector I-V, the C-V characteristic can change with exposure light power.The modeling method of therefore at present this equivalent electrical circuit to photodetector has certain limitation.
Summary of the invention
The equivalent electrical circuit modeling method of a kind of high sensitivity quantum effect photodetector that the objective of the invention is to be directed against the deficiency of prior art and provide; Adopt " VerilogA " language accurately to realize the photodetector characterisitic parameter under different irradiation powers and the device bias; Set up the equivalent electrical circuit that can accurately mate with photodetector with characterisitic parameter; Modeling program is simple, efficient is high; Significantly reduce photodetector internal physical characterisitic parameter and too much influenced the establishment of model accuracy and complicated process; The corresponding different luminous powers and setting, modification and the input of device bias parameter are very convenient, for sensing circuit design provides the photodetector that reflects the different components architectural characteristic accurately model.
The objective of the invention is to realize like this: a kind of modeling method of high sensitivity quantum effect photodetector equivalent electrical circuit; Be characterized in quantum dot-quantum well photoelectric detector is adopted different irradiation powers and the test of the electrical characteristics under the device bias; Use " VerilogA " language and set up equivalent-circuit model; Utilize circuit simulation software to verify then; For the design of sensing circuit provides the photodetector model of accurate reflection different structure device property, concrete modeling method comprises the following steps:
(1), test of the characterisitic parameter of photodetector and match
A, based on the photoelectricity test platform; Make I-E characteristic (I-V) characteristic family of photodetector; And obtain I and the funtcional relationship between the V under the different exposure light power:
Figure 829102DEST_PATH_IMAGE001
with " Origin " The software adopted piecewise fitting; Can realize in equivalent electrical circuit that thus making output current is the function of voltage with a controlled current source;
B, based on the photoelectricity test platform; Make capacitance-voltage (C-V) characteristic family of photodetector; Obtain C and the funtcional relationship between the V under the different exposure light power with " Origin " The software adopted piecewise fitting:
Figure 418346DEST_PATH_IMAGE002
; And adopt " VerilogA " language equivalent electric capacity to describe; In equivalent electrical circuit, can use the variable capacitance of " VerilogA " language description current source form to realize that its capacitance size is the function of voltage thus;
(2), the resistance in the equivalent circuit carries out " VerilogA " language description
Reference voltage
Figure 463662DEST_PATH_IMAGE003
value with capacitive feedback transreactance amplifier (CTIA) type reading out structure is the output voltage of equivalent-circuit model; Obtain the output impedance
Figure 796555DEST_PATH_IMAGE004
of equivalent-circuit model thus; Adopt " VerilogA " language equivalent output resistance to describe, in equivalent electrical circuit, can use the output impedance of the current source form of " VerilogA " language description to realize thus;
(3), the modeling of equivalent electrical circuit
The variable capacitance of the current source form of above-mentioned employing " VerilogA " language description is parallelly connected with the output impedance of current source form, formation can with the accurate equivalent-circuit model of coupling of photodetector.
(4), the analogue simulation of equivalent-circuit model
Equivalent-circuit model with above-mentioned foundation; Utilize " Spectre " emulator equivalent circuit model of circuit simulation software " Cadence " to carry out analogue simulation; Simulation result and the I-V and the C-V characteristic family of actual test are compared; Verify the correctness of equivalent-circuit model with this, for the design of sensing circuit provides photodetector model accurately.
The present invention compared with prior art has the following advantages:
1, the circuit modeling program is simple, efficient is high, has significantly reduced the establishment that photodetector internal physical characterisitic parameter too much influences model accuracy and complicated process;
2, equivalent electrical circuit can directly be connected with sensing circuit, the sensing circuit that makes things convenient for the photodetector design to be complementary;
3, use the modeling of " VerilogA " language; Corresponding different luminous power and device bias parameter that modification is set is very convenient; The realization of different luminous powers and device bias can get final product through directly importing concrete data in luminous power of establishing in advance corresponding in the equivalent-circuit model attribute and the device bias parameter, revises flexibly.
Description of drawings
Fig. 1 is the low-light I-V characteristic family figure of photodetector;
Fig. 2 is the low-light C-V characteristic family figure of photodetector;
Fig. 3 is " VerilogA " unit file page figure;
Fig. 4 is the resistance synoptic diagram of current source form;
Fig. 5 is the resistance attribute page figure of current source form;
Fig. 6 is the variable capacitance synoptic diagram in the equivalent electrical circuit;
The photodetector equivalent circuit diagram of Fig. 7 for simplifying;
Fig. 8 is the I-V characteristic Simulation oscillogram of equivalent-circuit model;
Fig. 9 is the C-V characteristic Simulation oscillogram of equivalent-circuit model.
Embodiment
With the embodiment of the higher quantum effect photodetector equivalent circuit modeling under the luminous power irradiation below the 5nW of a kind of sensitivity, the present invention is described further below, its concrete modeling procedure is following:
(1), the characterisitic parameter of photodetector test
Based on the photoelectricity test platform; Adopting Kelthley 4200-SCS characteristic of semiconductor analyser and wavelength is the helium-neon laser of 633nm; Test quantum dot-quantum well photoelectric detector is respectively I-V and the C-V electrical characteristic parameter of 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW at unglazed photograph (dark current) and exposure light power, and makes photodetector electrical characteristics curve family.
Consult accompanying drawing 1, can find out (120K) noise very little (pA) under the quantum effect photodetector low temperature of this low-light test macro, have high sensitivity and low-light-level performance.
Consult accompanying drawing 2, can find out photodetector electric capacity instead change on the lower side less.
(2), the characteristic match of photodetector
Make the I-V and the C-V characteristic family of photodetector according to test; In order to realize the highly sensitive characteristics of this photodetector; Practical devices should be operated under the anti-situation partially; Utilize the match of " Origin " software to obtain I-V and the funtcional relationship between the C-V under the different exposure light power:
Figure 345348DEST_PATH_IMAGE005
and
Figure 368143DEST_PATH_IMAGE006
; Wherein: V represents device bias; P represents exposure light power, and characteristic match concrete steps are following:
A, the match of I-V characteristic family
For the I-V family curve that family curve after the match can be preferably obtained with test coincides; Adopt the match of " Origin " software segments to obtain I and the funtcional relationship between the V under the different exposure light power:
Figure 635176DEST_PATH_IMAGE007
; Can in equivalent electrical circuit, can realize thus with a controlled current source; Making output current is the function of voltage; During the match of I-V characteristic family with being divided into two sections between device bias-3V to 0; Be respectively [1.5,0] and [3 ,-1.5].
When device bias , photodetector is respectively that
Figure 175059DEST_PATH_IMAGE009
funtcional relationship of 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW is represented as shown in the formula (1) at unglazed photograph (dark current) and exposure light power:
Figure 434002DEST_PATH_IMAGE010
(1)
When device bias
Figure 188331DEST_PATH_IMAGE011
, photodetector is respectively that
Figure 863026DEST_PATH_IMAGE007
funtcional relationship of 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW is represented as shown in the formula (2) at unglazed photograph (dark current) and exposure light power:
Figure 386412DEST_PATH_IMAGE012
(2)
B, the match of C-V characteristic family
For the C-V family curve that family curve after the match can be preferably obtained with test coincides; Adopt the match of " Origin " software segments to obtain C and the funtcional relationship between the V under the different exposure light power:
Figure 753939DEST_PATH_IMAGE013
; And describe with " VerilogA " language equivalent electric capacity; Can in equivalent electrical circuit, can use the variable capacitance of " VerilogA " language description current source form to realize thus; Its capacitance size is the function of voltage; The C-V characteristic family fits within and adopts once fitting in device bias [3, the 0] scope.
When device bias
Figure 729985DEST_PATH_IMAGE014
, photodetector is respectively that funtcional relationship of 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW is represented as shown in the formula (3) at unglazed photograph (dark current) and exposure light power:
Figure 851842DEST_PATH_IMAGE015
(3)
(3), the resistance in the equivalent circuit carries out " VerilogA " language description
It is with the funtcional relationship between the I-V that the current source of photodetector equivalent electrical circuit is realized:
Figure 187009DEST_PATH_IMAGE009
, the equivalent resistance of photodetector is represented as shown in the formula (4):
Figure 915930DEST_PATH_IMAGE016
（4）
Because capacitive feedback transreactance amplifier (CTIA) structure is adopted in reading of this photodetector; Make the output voltage size of photodetector equivalent-circuit model be the reference voltage of CTIA type sensing circuit
Figure 932428DEST_PATH_IMAGE017
value; And output current is
Figure 430405DEST_PATH_IMAGE018
, and the output impedance that can obtain equivalent-circuit model is thus represented as shown in the formula (5):
Figure 874156DEST_PATH_IMAGE019
（5）
Reference voltage
Figure 90374DEST_PATH_IMAGE017
value with CTIA type reading out structure is the output voltage of equivalent-circuit model; Obtain the output impedance
Figure 910562DEST_PATH_IMAGE020
of equivalent-circuit model thus; And adopt " VerilogA " language equivalent output resistance to describe, in equivalent electrical circuit, can use the output impedance of the current source form of " VerilogA " language description to realize thus.
Consult accompanying drawing 3; Create equivalent output resistance " VerilogA " file and " symbol " symbol of a current source form; The unit file " Cell " of newly-built " VerilogA " under " Cadence " software, and manufacture the equivalent output resistance symbol of a current source form.
Consult accompanying drawing 4, device bias and exposure light power are made as " biasvoltage " and " photopower " two parameters respectively, and in the attribute of the equivalent output resistance of current source form, be provided with.Because the electric current of photodetector receives the influence of device bias and exposure light power; And equivalent output resistance is relevant with output current; So the resistance of the current source form in the photodetector equivalent-circuit model should have the characteristics of a controlled current source, controlled by device bias and exposure light power.
Consult accompanying drawing 5; Owing to be respectively that
Figure 263046DEST_PATH_IMAGE007
funtcional relationship of 0.2 nW, 0.5 nW, 1 nW, 2 nW and 5 nW is described to photodetector at unglazed photograph (dark current) and exposure light power in the above-mentioned steps; So as long as in the attribute of current source, device bias and luminous power corresponding parameters " biasvoltage " and " photopower " are directly imported data, parameter setting and modification are all very convenient.
As when device bias is 1nW for-2V and luminous power; As long as input " 2 " in " biasvoltage " option; Input " 1 " gets final product in " photopower " option, adopts the equivalent resistance expression of the current source formula of " VeilogA " language description to represent as shown in the formula (6):
Figure 205594DEST_PATH_IMAGE021
（6）
Because reference voltage
Figure 601720DEST_PATH_IMAGE017
=2.5V of CTIA type sensing circuit; So equivalent resistance of current source formula
Figure 22337DEST_PATH_IMAGE022
; Two ports of definition current source are " ns " and " ps " when " VerilogA " language description of the equivalent output resistance of current source form; And the bias voltage of setting device and the initial value of two parameters of luminous power " biasvoltage " and " photopower "; Can in device attribute, make amendment during actual the use; Because the I-V characteristic is a piecewise fitting; The I-V curve that different luminous powers is corresponding different is so used " if-else " and " case " statement to realize with " VeriolgA " language description the time respectively.
(4), the variable capacitance in the equivalent circuit carries out " VerilogA " language description
Consult accompanying drawing 6; Create " VerilogA " file and " Symbol " symbol of a variable capacitance; Set up unit " cell " and " Symbol " symbol of a variable capacitance; Because the electric capacity of photodetector receives the influence of device bias and exposure light power, so the electric capacity in the photodetector equivalent-circuit model should be a variable capacitance that receives device bias and the control of exposure light power.Device bias and exposure light power are made as " biasvoltage " and " photopower " two parameters respectively; Be provided with identically with the equivalent output resistance of current source form, adopt the variable capacitance of the current source formula of " VeilogA " language description to express and represent as shown in the formula (7) with amending method:
（7）
I.e.
Figure 280460DEST_PATH_IMAGE024
; The capacitor C here itself is also with device bias and optical power change; So capacitor C must be placed on the bracket the inside, the relation of capacitor C and device bias and luminous power is:
Figure 205690DEST_PATH_IMAGE013
.When variable capacitance " VerilogA " language description of current source form; Two ports that defined current source are " ns " and " ps "; And the bias voltage of setting device and the initial value of two parameters of luminous power " biasvoltage " and " photopower "; Can in device attribute, make amendment during actual the use; Because the C-V family curve in device bias
Figure 367682DEST_PATH_IMAGE014
scope is an once fitting; The C-V family curve that different luminous powers is corresponding different is so used " case " statement to realize with " VeriolgA " language description the time.
(5), the modeling of equivalent electrical circuit
Consult accompanying drawing 7; Adopt " VerilogA " language that controlled current source and equivalent output resistance are described with a program; And generate " Symbol " symbol, and make the equivalent-circuit model that obtains only comprise two parts, a part is the resistance of current source form; Another part is a variable capacitance, and promptly photodetector can equivalence be the resistance circuit model parallelly connected with variable capacitance of a current source form.
(5), the equivalent circuit model carries out the analogue simulation checking
Consult accompanying drawing 8; Equivalent-circuit model with the above-mentioned photodetector of building up; " Spectre " emulator difference equivalent circuit model that utilizes circuit simulation software " Cadence " is in device bias [3; 0] carries out dc analysis and device bias " biasvoltage " in and two parameters of luminous power " photopower " are carried out parameter scanning; Equivalent-circuit model to above-mentioned foundation carries out analogue simulation, and the equivalent-circuit model I-V characterization result that emulation is obtained compares checking with the actual I-V characteristic family of testing.
Consult accompanying drawing 9; Equivalent-circuit model with the above-mentioned photodetector of building up; In device bias [3; 0] interior equivalent circuit model is done transactional analysis and is done device bias " biasvoltage " and two parameters of luminous power " photopower " are carried out parameter scanning, and the equivalent-circuit model C-V characterization result that emulation is obtained compares checking with the C-V characteristic family of actual test.
I-V and C-V simulation curve and the I-V of actual test and the comparison of C-V curve family through above-mentioned equivalent-circuit model; Can find out that both can coincide well; The checking simulation curve coincides with the I-V and the C-V curve family of actual test; Can verify the correctness of equivalent-circuit model thus, the photodetector model of accurate reflection different structure device property can be provided for the design of sensing circuit.
Above embodiment just further specifies the present invention, is not in order to restriction patent of the present invention, and is all for the present invention's equivalence enforcement, all should be contained within the claim scope of patent of the present invention.

Claims (1)

1. the modeling method of a high sensitivity quantum effect photodetector equivalent electrical circuit; It is characterized in that quantum dot-quantum well photoelectric detector is adopted different irradiation powers and the test of the electrical characteristics under the device bias; Use " VerilogA " language and set up equivalent-circuit model; Utilize circuit simulation software to verify then, for the design of sensing circuit provides the photodetector that reflects the different components architectural characteristic accurately model, concrete grammar comprises the following steps:
(1), test of the characterisitic parameter of photodetector and match
A, based on the photoelectricity test platform; Make I-E characteristic (I-V) characteristic family of photodetector; And obtain I and the funtcional relationship between the V under the different exposure light power:
Figure 115002DEST_PATH_IMAGE002
with " Origin " The software adopted piecewise fitting; Can realize in equivalent electrical circuit that thus making output current is the function of voltage with a controlled current source;
B, based on the photoelectricity test platform; Make capacitance-voltage (C-V) characteristic family of photodetector; Obtain C and the funtcional relationship between the V under the different exposure light power with " Origin " The software adopted piecewise fitting:
Figure 32142DEST_PATH_IMAGE004
; And adopt " VerilogA " language equivalent electric capacity to describe; In equivalent electrical circuit, can use the variable capacitance of " VerilogA " language description current source form to realize that its capacitance size is the function of voltage thus;
(2), the resistance in the equivalent circuit carries out " VerilogA " language description
Reference voltage
Figure 811879DEST_PATH_IMAGE006
value with capacitive feedback transreactance amplifier (CTIA) type reading out structure is the output voltage of equivalent-circuit model; Obtain the output impedance
Figure 269406DEST_PATH_IMAGE008
of equivalent-circuit model thus; And adopt " VerilogA " language equivalent output resistance to describe, in equivalent electrical circuit, can use the output impedance of the current source form of " VerilogA " language description to realize thus;
(3), the modeling of equivalent electrical circuit
The variable capacitance of the current source form of above-mentioned employing " VerilogA " language description is parallelly connected with the output impedance of current source form, formation can with the accurate equivalent-circuit model of coupling of photodetector;
(4), the analogue simulation of equivalent-circuit model
Equivalent-circuit model with above-mentioned foundation; Utilize " Spectre " emulator equivalent circuit model of circuit simulation software " Cadence " to carry out analogue simulation; Simulation result and the I-V and the C-V characteristic family of actual test are compared; Verify the correctness of equivalent-circuit model with this, for the design of sensing circuit provides photodetector model accurately.
CN 201110379701 2011-11-25 2011-11-25 Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector Active CN102564584B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110379701 CN102564584B (en) 2011-11-25 2011-11-25 Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201110379701 CN102564584B (en) 2011-11-25 2011-11-25 Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector

Publications (2)

Publication Number Publication Date
CN102564584A true CN102564584A (en) 2012-07-11
CN102564584B CN102564584B (en) 2013-10-30

Family

ID=46410610

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201110379701 Active CN102564584B (en) 2011-11-25 2011-11-25 Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector

Country Status (1)

Country Link
CN (1) CN102564584B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832176A (en) * 2012-08-29 2012-12-19 华东师范大学 Packaging method of quantum effect photoelectric detector and readout integrated circuit
CN104598680A (en) * 2015-01-14 2015-05-06 华东师范大学 Modeling and simulation of quantum photoelectric detector equivalent circuit based on neural network algorithms
CN106503285A (en) * 2016-09-14 2017-03-15 西安电子科技大学 A kind of circuit irradiation effect modeling method based on VHDL AMS
CN112484867A (en) * 2020-10-09 2021-03-12 天津大学 Method for improving detection efficiency of single photon detection front-end circuit

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024111A1 (en) * 1999-09-30 2001-04-05 Routech, Inc. Automatic routing system for pc board design
CN101504313A (en) * 2009-03-06 2009-08-12 华东师范大学 Design method for photoelectric detector reading circuit
CN101540197A (en) * 2009-04-22 2009-09-23 华东师范大学 Design method of emptying CTIA reading circuit of photo memory unit
US20100306723A1 (en) * 2009-05-26 2010-12-02 International Business Machines Corporation Order Independent Method of Performing Statistical N-Way Maximum/Minimum Operation for Non-Gaussian and Non-linear Distributions
WO2011055126A2 (en) * 2009-11-09 2011-05-12 Kabushiki Kaisha Toshiba A photon detector
CN102081680A (en) * 2009-11-30 2011-06-01 上海华虹Nec电子有限公司 Method for modeling P-channel metal oxide semiconductor (PMOS) one-time programmable memory (OTP) device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024111A1 (en) * 1999-09-30 2001-04-05 Routech, Inc. Automatic routing system for pc board design
CN101504313A (en) * 2009-03-06 2009-08-12 华东师范大学 Design method for photoelectric detector reading circuit
CN101540197A (en) * 2009-04-22 2009-09-23 华东师范大学 Design method of emptying CTIA reading circuit of photo memory unit
US20100306723A1 (en) * 2009-05-26 2010-12-02 International Business Machines Corporation Order Independent Method of Performing Statistical N-Way Maximum/Minimum Operation for Non-Gaussian and Non-linear Distributions
WO2011055126A2 (en) * 2009-11-09 2011-05-12 Kabushiki Kaisha Toshiba A photon detector
CN102081680A (en) * 2009-11-30 2011-06-01 上海华虹Nec电子有限公司 Method for modeling P-channel metal oxide semiconductor (PMOS) one-time programmable memory (OTP) device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832176A (en) * 2012-08-29 2012-12-19 华东师范大学 Packaging method of quantum effect photoelectric detector and readout integrated circuit
CN102832176B (en) * 2012-08-29 2014-07-30 华东师范大学 Packaging method of quantum effect photoelectric detector and readout integrated circuit
CN104598680A (en) * 2015-01-14 2015-05-06 华东师范大学 Modeling and simulation of quantum photoelectric detector equivalent circuit based on neural network algorithms
CN104598680B (en) * 2015-01-14 2017-07-04 华东师范大学 The method of the modeling and simulation of the quantum photoelectric detector equivalent circuit based on neural network algorithm
CN106503285A (en) * 2016-09-14 2017-03-15 西安电子科技大学 A kind of circuit irradiation effect modeling method based on VHDL AMS
CN106503285B (en) * 2016-09-14 2019-04-30 西安电子科技大学 A kind of circuit irradiation effect modeling method based on VHDL-AMS
CN112484867A (en) * 2020-10-09 2021-03-12 天津大学 Method for improving detection efficiency of single photon detection front-end circuit

Also Published As

Publication number Publication date
CN102564584B (en) 2013-10-30

Similar Documents

Publication Publication Date Title
CN103091289B (en) Automatic experimental platform based on laser-induced breakdown spectroscopy analysis technology
CN102564584B (en) Modeling method for equivalent circuit of high-sensitivity quantum effect photodetector
CN102610996B (en) Method and device for rapidly calibrating luminous power
CN107153139B (en) A kind of optical fibre gyro detection circuit board noise characteristic test method
CN204116216U (en) Can to the optoacoustic spectroscopy gas-detecting device of quartz tuning-fork resonance frequency real time correction
CN104316466A (en) Photoacoustic spectrometry gas detection device capable of correcting resonant frequency of quartz tuning fork in real time
Melchionni et al. Development of a design tool for closed-loop digital vibrometer
CN107389315A (en) Optical device frequency response measurement method and measurement apparatus
CN104807562B (en) TEMP chip test system based on labview
WO2019019666A1 (en) Fibre grating sensing demodulation system
CN107884344A (en) A kind of optoacoustic spectroscopy gas sensing system of the active air chamber based on semiconductor laser
CN101382455B (en) Laser power detection device and detecting control method
CN108344688A (en) Spectrometer and its spectral measurement method
CN104916083A (en) Internet of things based intelligent combustible gas inspection detector and calibration method thereof
CN101504313B (en) Design method for photoelectric detector reading circuit
Orsetti et al. Reliable and inexpensive solar irradiance measurement system design
CN103148779B (en) The adjusting gear of light source in position measurement apparatus
CN105302971A (en) Modeling method for equivalent circuit of waveguide type photoelectric detector
CN106370569A (en) Particulate matter online monitor signal pre-processing circuit based on Mie scattering
CN203798725U (en) Ozone analysis system
CN101540197B (en) Design method of emptying CTIA reading circuit of photo memory unit
CN110470291A (en) A kind of MEMS resonant formula gyroscope interface circuit and TT&C system
CN106370202A (en) Online testing method and device for comprehensive performance of detector for gyroscope
CN103197511B (en) Device and method for measuring performance of energy sensor of stepper
CN206709972U (en) A kind of homogeneity test device of terahertz detector

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant